دیتاشیت STD4NK80Z-1
مشخصات دیتاشیت
| نام دیتاشیت | ST(D,P)4NK80Z(-1,FP) |
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| حجم فایل | 556.277 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 18 |
دانلود دیتاشیت ST(D,P)4NK80Z(-1,FP) |
ST(D,P)4NK80Z(-1,FP) Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STD4NK80Z-1
- Power Dissipation (Pd): 80W
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 3A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5Ω@10V,1.5A
- Package: TO-251
- Manufacturer: STMicroelectronics
- Series: SuperMESH™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number: STD4N
- detail: N-Channel 800V 3A (Tc) 80W (Tc) Through Hole I-PAK
